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Event: 'Advances in Nonvolatile Memory Materials/Devices'

Conference
Date: Sunday, July 11, 2010 At 08:00:00 AM
Duration: 6 Days
Contact Info:
Engineering Conferences International
32 Broadway, Suite 314, New York, NY 10004
T: 1-212-514-6760 F: 1-212-514-6030 E: info@engconfintl.org
Email: This e-mail address is being protected from spam bots, you need JavaScript enabled to view it

The explosive adoption of the information and wireless technologies in nearly every aspect of the human society today has driven an exponential growth in demand for faster, cheaper, and more reliable memory and storage technology.

Resistive RAM (RRAM) has emerged as a very promising new alternative for future nonolatile memory applications. A new class of nonvolatile memory materials and devices such as solid-state electrolytes, binary transition metal oxides, and perovskite oxides and others has offered high-speed read and write, excellent endurance, retention, low-power consumption and fully compatible with CMOS integration processes.

This conference aims to provide a great impetus for the final breakthrough in this very important new field by providing a special forum for researchers from academic institutions, government research laboratories, and semiconductor industries across the world, that are actively involved in both fundamental and applications-oriented research on nonvolatile memory, to disseminate their latest research results and technological achievements.

Suzhou, China



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