Two Approaches to Large-Area Graphene Synthesis For Device Quality Materials
|Li and Hofrichter offer two approaches for large-area synthesis of graphene on substrates with potential for device integration.|
Reviewed by Jeff Morse, Ph.D, National Nanomanufacturing Network
- Li X, Cai W, An J, Kim S, Nah J, Yang D, Piner R, Velamakanni A, Jung I, Tutuc E, Banerjee SK, Colombo L, and Ruoff RS. 2009. Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils. Science 324:1312. DOI: 10.1126/science.1171245.
- Hofrichter J, Szafranek B, Otto M, Echtermeyer TJ, Baus M, Majerus A, Geringer V, Ramsteiner M, and Kurz H. 2010. Synthesis of Graphene on Silicon Dioxide by a Carbon Source. Nano Letters 10 (1): 36 - 42. DOI: 10.1021/nl902558x.
Graphene has been attracting considerable interest in recent years as a result of its unique band structure and physical properties, including extremely high carrier mobility, that make it a promising material for the semiconductor industry, though not one without challenges. One issue to consider has been the methods used to produce graphene films, including exfoliated graphite which yields graphene sheets sufficient only for research studies. Recent approaches to large-area synthesis of high quality single layer and multilayer graphene films have been explored by thermal decomposition of single crystal silicon carbide and chemical vapor deposition (CVD) on single crystal transition metals. While these approaches represent a significant step towards scaled production of quality graphene films, the requirements of high vacuum processing and expensive substrates with limited size still fall short of an integrated approach to incorporate this materials system.
Images reproduced with permission from Li X, et.al. Science 324:1312 (2009) and Hofrichter J, et.al. Nano Letters 10 (1): 36 - 42 (2010). Copyright 2009 AAAS and 2010 Amercian Chemical Society, respectively.
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